Power Mosfet

A discussion on Power Mosfet, V-I characteristics and application of it is done in this topic.

Summary

A discussion on Power Mosfet, V-I characteristics and application of it is done in this topic.

Things to Remember

1)A metal oxide semiconductor field effect transistor is a recent device developed by combining the area of field effect concept and MOS technology. A power MOSFET has four terminals called Drain, Source, Body and Gate

2)Triode, Saturation and Cut off are three regions of the operation on the V-I Characteristics of power Mosfet.

MCQs

No MCQs found.

Subjective Questions

Q1:

Write short notes on external female genital reproductive organs.


Type: Short Difficulty: Easy

Show/Hide Answer
Answer: <h4>a. External genital organ:-</h4>
<p>An external genital organ is also called pudendum or vulva. It consists of.<br />i. Labia majora.<br />ii. Labia minora.<br />iii. vestibule<br />iv. Clitoris.<br />v. Hymen.<br />vi. Vestibular glands.</p>
<p><strong>i. Labia majora :-</strong><br />These are two large folds of mucous membrane. Which forms the boundary of a vulva. It consists of fibrous tissue and fats covered with skin. It has two surfaces, medial surfaces, and a lateral surface. The medial surfaces show large no of sebaceous glands and the lateral surface is covered by coarse hair.</p>
<p><strong>ii. Labia minora :-</strong><br />These are two small folds of skin between the labia majora. This layer is devoid of hair and consist of sebaceous glands.</p>
<p><strong>iii. Vestibule :-</strong><br />The spaces between folds of labia minora are called vestibule. It shows three openings.<br />&bull; Urethral opening for urine.<br />&bull; Genital track vagina.<br />&bull; Openings of vestibular glands.</p>
<p><strong>iv. Clitoris :-</strong><br />It is highly sensitive part in female genital track situated at the apex of labia minora. The sensitivity is due to a presence of nerve ending.</p>
<p><strong>V. Hymen :-</strong><br />The hymen is the thin layer of mucus membrane which partially closes the opening of the vagina.</p>
<p><br /><strong>Vi. Vestibular glands :-</strong><br />Vestibular glands are situated on either side of vagina opening and they secrete mucus. Which keep the vulva moist.</p>
<p>Blood supply for external genital organ.<br />External and internal pudental artery.<br />Venous drainage :- internal iliac vein <br />Lymphatic drainage :- into an inguinal lymph node.</p>
<p>&nbsp;</p>
<p>&nbsp;</p>
<p>&nbsp;</p>
<p>&nbsp;</p>

Videos

External female Genital Organs
Power Mosfet

Power Mosfet

Power MOSFET

Power MOSFET
Power MOSFET

A metal oxide semiconductor field effect transistor is a recent device developed by combining the area of field effect concept and MOS technology. A power MOSFET has four terminals called Drain, Source, Body and Gate . The body of MOSFET is frequently connected to the source terminal so making it a three terminal device like field effect transistor.The MOSFET works by electronically varying the width of a channel along which charge carriers flow (electrons or holes). The charge carriers enter the channel at source and exit via the drain. The width of the channel is controlled by the voltage on an electrode known as a gate which is located between source and drain. It is insulated from the channel near an extremely thin layer of metal oxide.

V-I Characteristics

Power Mosfet output characteristics are shown in the figure below. It indicates the variation of drain current Id as a function of drain-source voltage Vds with gate-source voltage Vgs as a parameter for the control. For a low value of Vds, the graph between Id-Vds is almost linear( the region is called triode region). This indicates a constant value of on-resistance Rds = Vds/Id.For a fixed value of VGSand greater than threshold voltage VTH, MOSFET enters a saturation region where the value of the drain current has a fixed value. If the value of Vgs < Vth, it enters into the ut-off region.

V-I Characteristics
V-I Characteristics

Application of MOSFET

The on-resistance of MOSFET increases with voltage rating, this makes the device very lossy at high current application. The positive temperature coefficient of on-resistance reduces the second breakdown effect in P-MOSFET. It finds the application in high frequency switching applications, varying from a few watts to few KWS.

Lesson

Characteristics and Specification of Power Electronics Devices

Subject

Electrical Engineering

Grade

Engineering

Recent Notes

No recent notes.

Related Notes

No related notes.